3LN03SS - Ultrahigh-Speed Switching Applications

Datasheet Summary

Features

General-Purpose Switching Device.

Sanyo Semicon Device

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Datasheet Details

Part number	3LN03SS
Manufacturer	Sanyo Semicon Device
File Size	67.00 KB
Description	Ultrahigh-Speed Switching Applications
Datasheet	3LN03SS Datasheet
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www.DataSheet4U.com Ordering number : ENN8231 3LN03SS N-Channel Silicon MOSFET 3LN03SS Features • • • • General-Purpose Switching Device Applications Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage (TYP 300V) [Built-in one side diode for protection between Gate-to-Source]. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage (*1) Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings 30 10 0.35 1.4 0.

Published: Oct 1, 2007 |