4N37M - Phototransistor Optocouplers

This page provides the datasheet information for the 4N37M, a member of the 4N35M Phototransistor Optocouplers family.

Product Overview

ON Semiconductor

Datasheet Details

Part number	4N37M
Manufacturer	ON Semiconductor
File Size	328.95 KB
Description	Phototransistor Optocouplers
Datasheet	4N37M Datasheet
Additional preview pages of the 4N37M datasheet.

4N37M Product details

Description

The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a standard plastic 6 pin dual in

line package.

Features

Minimum Current Transfer Ratio at IF = 10 mA, VCE = 10 V:.
10% for 4N27M and 4N28M.
20% for 4N25M and 4N26M.
100% for 4N35M and 4N36M and 4N37M.
Safety and Regulatory Approvals:.
UL1577, 4,170 VACRMS for 1 Minute.
DIN.
EN/IEC60747.
5.
5, 850 V Peak Working Insulation Voltage.

📁 Similar Datasheet

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4N37 - 6-Pin DIP Optoisolators (Motorola Inc)
4N37 - PHOTO TRANSISTOR (Toshiba Semiconductor)
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Other Datasheets by ON Semiconductor

4N35 - 6-Pin General Purpose Phototransistor Optocouplers
4N35M - Phototransistor Optocouplers
4N36M - Phototransistor Optocouplers
4N38M - 6-Pin DIP High Voltage Phototransistor Optocouplers

Published: Dec 25, 2021 |