4N38M Description
The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package.
4N38M Key Features
- High Voltage
- MOC8204M, BVCEO = 400 V
- H11D1M, BVCEO = 300 V
- H11D3M, BVCEO = 200 V
- Safety and Regulatory Approvals
- UL1577, 4,170 VACRMS for 1 Minute
- DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage