Datasheet4U Logo Datasheet4U.com

AN1042D - High Fidelity Switching Audio Amplifiers Using TMOS Power MOSFETs

Download the AN1042D datasheet PDF. This datasheet also covers the AN1042 variant, as both devices belong to the same high fidelity switching audio amplifiers using tmos power mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • d generates rise and fall times of about 30 nanoseconds. It is designed to put out a maximum current of ±5 amp.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AN1042_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AN1042D
Manufacturer onsemi
File Size 121.27 KB
Description High Fidelity Switching Audio Amplifiers Using TMOS Power MOSFETs
Datasheet download datasheet AN1042D Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AN1043 Unique Features of the MCP23X08/17 GPIO Expanders Microchip
AN1001 The Next Step in Surface-Mount Power MOSFETs Vishay Siliconix
AN1003 Thyristors Littelfuse
AN101 MOSFETs Vishay Siliconix
AN103 The FET Constant-Current Source/Limiter Siliconix

Other Datasheets by onsemi

Part Number Description
AN1042 High Fidelity Switching Audio Amplifiers Using TMOS Power MOSFETs
AN1048 RC Snubber Networks
AN1048D RC Snubber Networks

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AN1042/D High Fidelity Switching Audio Amplifiers Using TMOS Power MOSFETs Prepared by: Donald E. Pauly ON Semiconductor Special Consultant http://onsemi.com APPLICATION NOTE With the introduction of complementary bipolar power transistors in the late 1960s, switching amplifiers became theoretically practical. At low frequencies, bipolar transistors have switching efficiencies of 99% and will directly drive a low impedance speaker filter. The requirement for switching frequencies above 100 kHz resulted in excessive losses however. Bipolar drive circuitry was also complex because of its large base current requirement. With the advent of complementary (voltage/current ratings) TMOS power MOSFETs, gate drive circuitry has been simplified.