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ATP216 - N-Channel Power MOSFET

Datasheet Summary

Features

  • ON-resistance RDS(on)1=17mΩ(typ. ).
  • 1.8V drive.
  • Protection diode in.
  • Slim package.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 Avalanche Current.
  • 2 Note :.
  • 1 VDD=10V.

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Datasheet Details

Part number ATP216
Manufacturer ON Semiconductor
File Size 262.65 KB
Description N-Channel Power MOSFET
Datasheet download datasheet ATP216 Datasheet
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Full PDF Text Transcription

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Ordering number : EN8985A ATP216 N-Channel Power MOSFET 50V, 35A, 23mΩ, Single ATPAK http://onsemi.com Features • ON-resistance RDS(on)1=17mΩ(typ.) • 1.8V drive • Protection diode in • Slim package • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note :*1 VDD=10V, L=100μH, IAV=18A *2 L≤100μH, Single pulse EAS IAV Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 50 ±10 35 105 40 150 --55 to +150 40 17.5 Unit V V A A W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device.
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