ATP216 - N-Channel Silicon MOSFET

Datasheet Summary

Features

N-Channel Silicon MOSFET General-Purpose Switching Device.

Sanyo Semicon Device

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Datasheet Details

Part number	ATP216
Manufacturer	Sanyo Semicon Device
File Size	451.38 KB
Description	N-Channel Silicon MOSFET
Datasheet	ATP216 Datasheet
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www.DataSheet.co.kr Ordering number : EN8985 ATP216 SANYO Semiconductors DATA SHEET ATP216 Features • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications • • ON-resistance RDS(on)1=17mΩ(typ.) 1.8V drive Slim package Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 50 ±10 35 105 40 150 --55 to +150 40 17.

Published: Dec 28, 2011 |