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Ordering number : EN8985
ATP216
SANYO Semiconductors
DATA SHEET
ATP216
Features
• •
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
• •
ON-resistance RDS(on)1=17mΩ(typ.) 1.8V drive
Slim package Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 50 ±10 35 105 40 150 --55 to +150 40 17.