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ATP405 - N-Channel Power MOSFET

Features

  • ON-resistance RDS(on)=25mΩ (typ. ).
  • 10V drive.
  • Input capacitance Ciss=4000pF (typ. ).
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 Avalanche Current.
  • 2 Note :.
  • 1 VDD=30V, L=100μH.

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Datasheet Details

Part number ATP405
Manufacturer onsemi
File Size 259.09 KB
Description N-Channel Power MOSFET
Datasheet download datasheet ATP405 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1458A ATP405 N-Channel Power MOSFET 100V, 40A, 33mΩ, ATPAK http://onsemi.com Features • ON-resistance RDS(on)=25mΩ (typ.) • 10V drive • Input capacitance Ciss=4000pF (typ.) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note :*1 VDD=30V, L=100μH, IAV=40A *2 L≤100μH, Single pulse EAS IAV Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 100 ±20 40 160 70 150 --55 to +150 148 40 Unit V V A A W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device.
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