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ATP405 - N-Channel Silicon MOSFET

Features

  • ON-resistance RDS(on)=25mΩ (typ. ).
  • 10V drive.
  • Input capacitance Ciss=4000pF (typ. ).
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 Avalanche Current.
  • 2 Note :.
  • 1 VDD=30V, L=100μ.

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Ordering number : ENA1458A ATP405 SANYO Semiconductors DATA SHEET ATP405 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • ON-resistance RDS(on)=25mΩ (typ.) • 10V drive • Input capacitance Ciss=4000pF (typ.) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note :*1 VDD=30V, L=100μH, IAV=40A *2 L≤100μH, Single pulse EAS IAV Conditions PW≤10μs, duty cycle≤1% Tc=25°C Package Dimensions unit : mm (typ) 7057-001 ATP405-TL-H 6.5 1.5 4.6 2.6 0.4 0.
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