B817C - Bipolar Transistor

onsemi

Key Features

Large current capacitance.
Wide SOA and high durability against breakdown.
Adoption of MBIT process Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C Conditions Ratings Unit -160 V -140 V --6 V --12 A --20.

B817C bipolar transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	B817C
Manufacturer	onsemi
File Size	168.34 KB
Description	Bipolar Transistor
Datasheet	B817C Datasheet

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Ordering number : ENA0188B 2SB817C Bipolar Transistor –140V, –12A, Low VCE(sat) PNP TO-3P-3L http://onsemi.com Features • Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C Conditions Ratings Unit -160 V -140 V --6 V --12 A --20 A 2.5 W 120 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.