BAS21AHT1G
BAS21AHT1G is Low Leakage Switching Diode manufactured by onsemi.
Features
- NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
VR Continuous Reverse Voltage VRRM Repetitive Peak Reverse Voltage
IF Peak Forward Current IFM(surge) Peak Forward Surge Current THERMAL CHARACTERISTICS
250 Vdc 250 Vdc 200 m Adc 625 m Adc
Symbol
Characteristic
Max Unit
PD Total Device Dissipation FR- 5 Board, (Note 1) TA = 25°C Derate above 25°C
200 m W 1.57 m W/°C
Rq JA
Thermal Resistance, Junction- to- Ambient
635 °C/W
TJ, Tstg Junction and Storage Temperature Range
- 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR-...
