BAS21DW5T1 Datasheet | onsemi

Features - Pb- Free Packages are Available MAXIMUM RATINGS Rating Continuous Reverse Voltage BAS19 BAS20 BAS21 Repetitive Peak Reverse Voltage BAS19 BAS20 BAS21 Continuous Forward Current Peak Forward Surge Current Junction and Storage Temperature Range Power Dissipation (Note 1) Electrostatic Discharge Symbol VR Value 120 200 250 120 200 250 200 625 - 55 to +150 385 HM < 500 MM < 400 Unit Vdc http://onsemi. HIGH VOLTAGE SWITCHING DIODE SOT- 23 3 1 CATHODE ANODE SC- 88A 5 1 CATHODE ANODE 4 CATHODE m Adc m Adc °C m W V V 1 2 SOT- 23 (TO- 236) CASE 318 STYLE 8 1 3 3 ANODE VRRM Vdc IF IFM(surge) TJ, Tstg PD ESD MARKING DIAGRAMS 3 Jx M G G 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 1. Mounted on FR- 5 Board = 1.0 x 0.75 x 0.062 in. 5 3 1 SC- 88A (SOT- 353) CASE 419A 1 4 Jx M G G 2 3 x = P, R, or S P = BAS19LT1 R = BAS20LT1 S = BAS21LT1 or BAS21DW5T1 M = Date Code G = Pb- Free Package (Note: Microdot may be in either location) - Date Code orientation and/or overbar may vary depending upon the manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Preferred devices are remended choices for future use and best overall value. © Semiconductor ponents Industries, LLC, 2007 January, 2007 - Rev. 9 Publication Order Number: BAS19LT1/D BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 THERMAL CHARACTERISTICS (SOT- 23) Characteristic Total Device Dissipation FR- 5 Board (Note 2) TA = 25°C Derate above 25°C Thermal Resistance Junction- to- Ambient (SOT- 23) Total Device Dissipation Alumina Substrate (Note 3) TA = 25°C Derate above 25°C Thermal Resistance Junction- to- Ambient Junction and Storage Temperature Range Symbol PD Max 225 1.8 Rq JA PD 556 300 2.4 Rq JA...