BC549C
Low Noise Transistors
NPN Silicon
MAXIMUM RATINGS Rating
Collector- Emitter Voltage
Collector- Base Voltage
Emitter- Base Voltage
Collector Current
- Continuous Total Device Dissipation @ TA = 25°C
Derate above 25°C Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol VCEO VCBO VEBO IC PD
TJ, Tstg
BC549 BC550 30 45 30 50 5.0 100 625 5.0
1.5 12
- 55 to +150
Unit Vdc Vdc Vdc m Adc m W m W/°C Watt m W/°C °C
Symbol Rq JA Rq JC
Max 200 83.3
Unit °C/W °C/W
BC549B,C BC550B,C
1 2 3
CASE 29- 04, STYLE 17 TO- 92 (TO- 226AA)
COLLECTOR 1
2 BASE
3 EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector- Emitter Breakdown Voltage (IC = 10 m Adc, IB = 0)
BC549B,C BC550B,C
V(BR)CEO...
