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BFL4007 - N-Channel Power MOSFET

Features

  • Reverse recovery time trr=95ns (typ. ).
  • Input capacitance Ciss=1200pF (typ. ).
  • ON-resistance RDS(on)=0.52Ω (typ. ).
  • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) IDc.
  • 1 IDpack.
  • 2 Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition).
  • 3 14 A 8.7 A Drain Cur.

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Datasheet Details

Part number BFL4007
Manufacturer ON Semiconductor
File Size 173.32 KB
Description N-Channel Power MOSFET
Datasheet download datasheet BFL4007 Datasheet
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Full PDF Text Transcription

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Ordering number : ENA1689A BFL4007 N-Channel Power MOSFET 600V, 14A, 0.68Ω, TO-220F-3FS http://onsemi.com Features • Reverse recovery time trr=95ns (typ.) • Input capacitance Ciss=1200pF (typ.) • ON-resistance RDS(on)=0.52Ω (typ.) • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) IDc*1 IDpack*2 Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition)*3 14 A 8.
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