BFL4007 - N-Channel Silicon MOSFET

Features

Reverse recovery time trr=95ns (typ).
Input capacitance Ciss=1200pF (typ).
ON-resistance RDS(on)=0.52Ω (typ).
10V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS IDc.
1 IDpack.
2 IDP Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition).
3 PW≤10μs, duty.

Sanyo

Datasheet Details

Part number	BFL4007
Manufacturer	Sanyo
File Size	187.88 KB
Description	N-Channel Silicon MOSFET
Datasheet	BFL4007 Datasheet
Additional preview pages of the BFL4007 datasheet.

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Full PDF Text Transcription

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Ordering number : ENA1689 BFL4007 SANYO Semiconductors DATA SHEET BFL4007 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Reverse recovery time trr=95ns (typ) • Input capacitance Ciss=1200pF (typ) • ON-resistance RDS(on)=0.52Ω (typ) • 10V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS IDc*1 IDpack*2 IDP Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3 PW≤10μs, duty cycle≤1% 600 V ±30 V 14 A 8.

Published: Jul 31, 2015 |