BMS3003 - P-Channel Power MOSFET

Datasheet Summary

Features

ON-resistance RDS(on)1=5.0mΩ (typ. ).
Input capacitance Ciss=13200pF (typ. ).
-4V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV Note :.
1 VDD=--36V, L=100μH, IAV=--60A (F.

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Datasheet Details

Part number	BMS3003
Manufacturer	ON Semiconductor
File Size	84.26 KB
Description	P-Channel Power MOSFET
Datasheet	BMS3003 Datasheet
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Ordering number : ENA1907B BMS3003 P-Channel Power MOSFET –60V, –78A, 6.5mΩ, TO-220F-3SG http://onsemi.com Features • ON-resistance RDS(on)1=5.0mΩ (typ.) • Input capacitance Ciss=13200pF (typ.) • -4V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--36V, L=100μH, IAV=--60A (Fig.1) *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --60 ±20 --78 --312 2.

Published: Jan 12, 2016 |