BMS3004 - P-Channel Power MOSFET

Datasheet Summary

Features

ON-resistance RDS(on)1=6.5mΩ (typ. ).
Input capacitance Ciss=13400pF (typ. ).
4V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV Note :.
1 VDD=--48V, L=100μH, IAV=--54A (F.

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Datasheet Details

Part number	BMS3004
Manufacturer	ON Semiconductor
File Size	189.61 KB
Description	P-Channel Power MOSFET
Datasheet	BMS3004 Datasheet
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Ordering number : ENA1908B BMS3004 P-Channel Power MOSFET –75V, –68A, 8.5mΩ, TO-220F-3SG http://onsemi.com Features • ON-resistance RDS(on)1=6.5mΩ (typ.) • Input capacitance Ciss=13400pF (typ.) • 4V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--48V, L=100μH, IAV=--54A (Fig.1) *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C TO-220F-3SG Ratings --75 ±20 --68 --272 2.

Published: Jan 12, 2016 |