Datasheet4U Logo Datasheet4U.com

BSP16T1G - High Voltage Transistors

Datasheet Summary

Description

SOT 223 (TO

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

Features

  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

📥 Download Datasheet

Datasheet preview – BSP16T1G

Datasheet Details

Part number BSP16T1G
Manufacturer ON Semiconductor
File Size 160.84 KB
Description High Voltage Transistors
Datasheet download datasheet BSP16T1G Datasheet
Additional preview pages of the BSP16T1G datasheet.

📁 Similar Datasheet

  • BSP16T1 - PNP SILICON HIGH VOLTAGE TRANSISTOR (Motorola Inc)
  • BSP16 - PNP high-voltage transistor (NXP)
  • BSP16 - PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR (Zetex Semiconductors)
  • BSP100 - N-channel enhancement mode TrenchMOS transistor (NXP)
  • BSP100 - N-channel enhancement mode TrenchMOS transistor (NXP)
  • BSP106 - N-channel enhancement mode vertical D-MOS transistor (NXP)
  • BSP107 - N-channel enhancement mode vertical D-MOS transistor (NXP)
  • BSP108 - N-channel enhancement mode vertical D-MOS transistor (NXP)
  • BSP110 - N-channel enhancement mode vertical D-MOS transistor (NXP)
  • BSP120 - N-channel enhancement mode vertical D-MOS transistor (NXP)
Other Datasheets by ON Semiconductor
  • BSP16T1 - High Voltage Transistors
  • BSP19AT1G - NPN Silicon Expitaxial Transistor
  • BSP52T1 - MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
  • BSP52T1G - NPN Small-Signal Darlington Transistor
  • BSP52T3 - (BSP52T1 / BSP52T3) NPN Small-Signal Darlington Transistor
  • BSP52T3G - NPN Small-Signal Darlington Transistor

Full PDF Text Transcription

Click to expand full text
High Voltage Transistors PNP Silicon BSP16T1G Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C (Note 1) VCEO VCBO VEBO IC PD −300 −350 −6.0 −100 1.5 Vdc Vdc Vdc mAdc W Storage Temperature Range PD −65 to °C +150 Junction Temperature TJ THERMAL CHARACTERISTICS 150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 83.3 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1.
Published: |