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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BSP16T1/D
SOT-223 Package High Voltage Transistor
PNP Silicon
COLLECTOR 2,4 BASE 1 EMITTER 3
BSP16T1
Motorola Preferred Device
SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
4
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current Base Current Total Device Dissipation, TA = 25°C (1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC IB PD Tstg TJ Value –300 –350 –6.0 –1000 –500 1.5 – 65 to +150 150 Unit Vdc Vdc Vdc mAdc mAdc Watts °C °C
1 2 3
CASE 318E-04, STYLE 1 TO-261AA
DEVICE MARKING
BT2
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA Max 83.
BSP16T1 Datasheet
