BUL44D2 - NPN Transistor

onsemi

Key Features

Low Base Drive Requirement.
High Peak DC Current Gain (55 Typical) @ IC = 100 mA.
Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread.
Integrated Collector.
Emitter Free Wheeling Diode.
Fully Characterized and Guaranteed Dynamic VCE(sat).
“6 Sigma” Process Providing Tight and Reproductible Parameter Spreads POWER.

BUL44D2 npn transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	BUL44D2
Manufacturer	onsemi
File Size	504.38 KB
Description	NPN Transistor
Datasheet	BUL44D2 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BUL44D2	NPN Transistor	Motorola Inc
BUL44	NPN Transistor	Motorola Inc
BUL44	Silicon NPN Power Transistor	Inchange Semiconductor
BUL44F	NPN Transistor	Motorola Inc
BUL416	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR	STMicroelectronics

Other Datasheets by onsemi

Part Number	Description
BUL44	NPN Transistor
BUL44F	NPN Transistor
BUL44G	NPN Bipolar Power Transistor
BUL42D	4 AMPERES 700 VOLTS 75 WATTS POWER TRANSISTOR
BUL45	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUL44D2/D BUL44D2 Designer's ™ Data Sheet High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The BUL44D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.