BXL4004 - N-Channel Power MOSFET

Features

ON-resistance RDS(on)1=3mΩ (typ. ).
4.5V drive.
Input capacitance Ciss=8200pF (typ. ) Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV Note :.
1 VDD=24V, L=100μH, IAV=60A (Fig.1.

ON Semiconductor

Datasheet Details

Part number	BXL4004
Manufacturer	ON Semiconductor
File Size	221.72 KB
Description	N-Channel Power MOSFET
Datasheet	BXL4004 Datasheet
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Full PDF Text Transcription

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Ordering number : EN9050A BXL4004 N-Channel Power MOSFET 40V, 100A, 3.9mΩ, TO-220-3L http://onsemi.com Features • ON-resistance RDS(on)1=3mΩ (typ.) • 4.5V drive • Input capacitance Ciss=8200pF (typ.) Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=24V, L=100μH, IAV=60A (Fig.1) *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 40 ±20 100 400 1.75 75 150 --55 to +150 420 60 Unit V V A A W W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device.

Published: Feb 7, 2016 |