BXL4004 - N-Channel Silicon MOSFET

Features

ON-resistance RDS(on)1=3mΩ (typ. ).
4.5V drive.
Input capacitance Ciss=8200pF (typ. ) Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV Note :.
1 VDD=24V, L=100μH, IAV=60A (Fig.1.

Sanyo

Datasheet Details

Part number	BXL4004
Manufacturer	Sanyo
File Size	253.12 KB
Description	N-Channel Silicon MOSFET
Datasheet	BXL4004 Datasheet
Additional preview pages of the BXL4004 datasheet.

📁 Similar Datasheet

BXL4004 - N-Channel Power MOSFET (ON Semiconductor)

Other Datasheets by Sanyo

BXL4001 - N-Channel Silicon MOSFET

Full PDF Text Transcription

Click to expand full text

Ordering number : EN9050A BXL4004 SANYO Semiconductors DATA SHEET BXL4004 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=3mΩ (typ.) • 4.5V drive • Input capacitance Ciss=8200pF (typ.) Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=24V, L=100μH, IAV=60A (Fig.1) *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 40 ±20 100 400 1.

Published: Feb 7, 2016 |