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CAT22C10 - 256-Bit Nonvolatile CMOS Static RAM

General Description

The CAT22C10 NVRAM is a 256-bit nonvolatile memory organized as 64 words x 4 bits.

The high speed Static RAM array is bit for bit backed up by a nonvolatile EEPROM array which allows for easy transfer of data from RAM array to EEPROM (STORE) and from EEPROM to RAM (RECALL).

Key Features

  • s Single 5V Supply s Fast RAM Access Times: s Low CMOS Power Consumption:.
  • 200ns.
  • 300ns s Infinite EEPROM to RAM Recall s CMOS and TTL Compatible I/O s Power Up/Down Protection s 100,000 Program/Erase Cycles (E2PROM).
  • Active: 40mA Max.
  • Standby: 30µA Max. s JEDEC Standard Pinouts:.
  • 18-lead DIP.
  • 16-lead SOIC s 10 Year Data Retention s Commercial, Industrial and Automotive Temperature Ranges.

📥 Download Datasheet

Datasheet Details

Part number CAT22C10
Manufacturer onsemi
File Size 154.73 KB
Description 256-Bit Nonvolatile CMOS Static RAM
Datasheet download datasheet CAT22C10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CAT22C10 256-Bit Nonvolatile CMOS Static RAM FEATURES s Single 5V Supply s Fast RAM Access Times: s Low CMOS Power Consumption: –200ns –300ns s Infinite EEPROM to RAM Recall s CMOS and TTL Compatible I/O s Power Up/Down Protection s 100,000 Program/Erase Cycles (E2PROM) –Active: 40mA Max. –Standby: 30µA Max. s JEDEC Standard Pinouts: –18-lead DIP –16-lead SOIC s 10 Year Data Retention s Commercial, Industrial and Automotive Temperature Ranges DESCRIPTION The CAT22C10 NVRAM is a 256-bit nonvolatile memory organized as 64 words x 4 bits. The high speed Static RAM array is bit for bit backed up by a nonvolatile EEPROM array which allows for easy transfer of data from RAM array to EEPROM (STORE) and from EEPROM to RAM (RECALL). STORE operations are completed in 10ms max.