CPH6121 - Bipolar Transistor

onsemi

Key Features

Adoption of MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High speed switching.
Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm).
High allowable power dissipation Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current C.

CPH6121 bipolar transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	CPH6121
Manufacturer	onsemi
File Size	416.45 KB
Description	Bipolar Transistor
Datasheet	CPH6121 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN7260A CPH6121 Bipolar Transistor –12V, –3A, Low VCE(sat), PNP Single CPH6 http://onsemi.com Applications • Relay drivers, lamp drivers, motor drivers, strobes Features • Adoption of MBIT process • High current capacitance • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm) • High allowable power dissipation Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP IB PC Tj Storage Temperature Tstg Conditions Mounted on a ceramic board (600mm2×0.