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CPH6121 - DC / DC Converter Applications

Key Features

  • 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current(Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions 0.7 0.9 0.2.
  • Adoption of MBIT process. High current capacitance. Low collect.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : ENN7260 CPH6121 PNP Epitaxial Planar Silicon Transistor CPH6121 DC / DC Converter Applications Applications • Package Dimensions unit : mm 2146A [CPH6121] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Relay drivers, lamp drivers, motor drivers, strobes. Features • • • • • 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current(Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions 0.7 0.9 0.2 • Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage.