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ECH8502 - Bipolar Transistor

Key Features

  • Composite type, facilitating high-density mounting.
  • Mounting height 0.9mm.
  • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.08V(typ. )@IC=2.5A PNP : VCE(sat)= --0.12V(typ. )@IC= --2.5A.
  • Halogen free compliance Specifications ( ): PNP Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipa.

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Datasheet Details

Part number ECH8502
Manufacturer onsemi
File Size 295.22 KB
Description Bipolar Transistor
Datasheet download datasheet ECH8502 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1758A ECH8502 Bipolar Transistor (–)50V, (–)30A, Low VCE(sat) Complementary Dual ECH8 http://onsemi.com Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.08V(typ.)@IC=2.5A PNP : VCE(sat)= --0.12V(typ.)@IC= --2.5A • Halogen free compliance Specifications ( ): PNP Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg Conditions PW≤1μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.