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ECH8673 - Power MOSFET

Features

  • ON-resistance Nch: RDS(on)1=65mΩ(typ. ), Pch: ON-resistance RDS(on)1=125mΩ(typ. ).
  • 4V drive.
  • Halogen free compliance.
  • Nch+Pch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature VDSS VGSS ID IDP PD PT Tch PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2.

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Datasheet Details

Part number ECH8673
Manufacturer ON Semiconductor
File Size 243.95 KB
Description Power MOSFET
Datasheet download datasheet ECH8673 Datasheet
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Full PDF Text Transcription

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Ordering number : ENA1892B ECH8673 Power MOSFET 40V, 3.5A, 85mΩ, –40V –2.5A, 163mΩ, Complementary Dual ECH8 http://onsemi.com Features • ON-resistance Nch: RDS(on)1=65mΩ(typ.), Pch: ON-resistance RDS(on)1=125mΩ(typ.) • 4V drive • Halogen free compliance • Nch+Pch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature VDSS VGSS ID IDP PD PT Tch PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) 1unit When mounted on ceramic substrate (1200mm2×0.8mm) Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling.
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