ECH8690 - Dual Power MOSFET

onsemi

General Description

Technology, Which is Specifically Designed to Low on Resistance.

This devices is suitable for applications with low on resistance requirements.

Key Features

On.
State Resistance.
Nch:RDS(on) 1 = 42 mW (typ. ).
Pch:RDS(on) 1 = 73 mW (typ. ).
Protection Diode In.
4 V rive.
Nch + Pch MOSFET.
This Device is Pb.
Free, Halogen Free and RoHS Compliant DATA SHEET www. onsemi. com SOT.
28FL/ECH8 CASE 318BF.

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ECH8690 dual power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	ECH8690
Manufacturer	onsemi
File Size	201.70 KB
Description	Dual Power MOSFET
Datasheet	ECH8690 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Power, Complementary Dual ECH8 60 V, 4.7 A, 55 mW -60 V, -3.5 A, 94 mW ECH8690 Description This Power MOSFET is Produced Using onsemi’s Trench Technology, Which is Specifically Designed to Low on Resistance. This devices is suitable for applications with low on resistance requirements. Features • On−State Resistance ♦ Nch:RDS(on) 1 = 42 mW (typ.) ♦ Pch:RDS(on) 1 = 73 mW (typ.) • Protection Diode In • 4 V rive • Nch + Pch MOSFET • This Device is Pb−Free, Halogen Free and RoHS Compliant DATA SHEET www.onsemi.com SOT−28FL/ECH8 CASE 318BF ELECTRICAL CONNECTION 8 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 MARKING DIAGRAM UM LOT No.