ECH8690 Description
This Power MOSFET is Produced Using onsemi’s Trench Technology, Which is Specifically Designed to Low on Resistance. This devices is suitable for applications with low on resistance requirements.
ECH8690 Key Features
- On-State Resistance
- Nch:RDS(on) 1 = 42 mW (typ.)
- Pch:RDS(on) 1 = 73 mW (typ.)
- 4 V rive
- Nch + Pch MOSFET
- This Device is Pb-Free, Halogen Free and RoHS pliant