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ECH8690 - Dual Power MOSFET

Description

Technology, Which is Specifically Designed to Low on Resistance.

This devices is suitable for applications with low on resistance requirements.

Features

  • On.
  • State Resistance.
  • Nch:RDS(on) 1 = 42 mW (typ. ).
  • Pch:RDS(on) 1 = 73 mW (typ. ).
  • Protection Diode In.
  • 4 V rive.
  • Nch + Pch MOSFET.
  • This Device is Pb.
  • Free, Halogen Free and RoHS Compliant DATA SHEET www. onsemi. com SOT.
  • 28FL/ECH8 CASE 318BF.

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Datasheet preview – ECH8690

Datasheet Details

Part number ECH8690
Manufacturer ON Semiconductor
File Size 201.70 KB
Description Dual Power MOSFET
Datasheet download datasheet ECH8690 Datasheet
Additional preview pages of the ECH8690 datasheet.

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Full PDF Text Transcription

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MOSFET – Power, Complementary Dual ECH8 60 V, 4.7 A, 55 mW -60 V, -3.5 A, 94 mW ECH8690 Description This Power MOSFET is Produced Using onsemi’s Trench Technology, Which is Specifically Designed to Low on Resistance. This devices is suitable for applications with low on resistance requirements. Features • On−State Resistance ♦ Nch:RDS(on) 1 = 42 mW (typ.) ♦ Pch:RDS(on) 1 = 73 mW (typ.) • Protection Diode In • 4 V rive • Nch + Pch MOSFET • This Device is Pb−Free, Halogen Free and RoHS Compliant DATA SHEET www.onsemi.com SOT−28FL/ECH8 CASE 318BF ELECTRICAL CONNECTION 8 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 MARKING DIAGRAM UM LOT No.
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