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EMH2314 - Power MOSFET

Key Features

  • ON-resistance RDS(on)1=28mW(typ. ).
  • 1.8V drive.
  • Halogen free compliance.
  • Protection Diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tj Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit.

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Datasheet Details

Part number EMH2314
Manufacturer onsemi
File Size 399.47 KB
Description Power MOSFET
Datasheet download datasheet EMH2314 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN8759A EMH2314 Power MOSFET –12V, 37mΩ, –5A, Dual P-Channel http://onsemi.com Features • ON-resistance RDS(on)1=28mW(typ.) • 1.8V drive • Halogen free compliance • Protection Diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tj Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Value --12 ±8 --5 --20 1.0 1.2 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.