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Ordering number : EN8759
EMH2314
SANYO Semiconductors
DATA SHEET
EMH2314
Features
• •
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance RDS(on)1=28mΩ(typ.) 1.8V drive • Halogen free compliance • Protection Diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings -12 ±10 --5 -20 1.0 1.2 150 -55 to +150 Unit V V A A W W °C °C
Package Dimensions
unit : mm (typ.) 7045-002
0.2 0.2 0.
EMH2314 Datasheet
