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EMH2801 - P-Channel Power MOSFET

Features

  • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting.
  • [MOSFET].
  • Low ON-resistance.
  • 1.8V drive.
  • [SBD].
  • Small switching noise.
  • Low forward voltage (IF=2.0A, VF max=0.46V).
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Dra.

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Datasheet Details

Part number EMH2801
Manufacturer onsemi
File Size 481.87 KB
Description P-Channel Power MOSFET
Datasheet download datasheet EMH2801 Datasheet

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Full PDF Text Transcription

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Ordering number : ENA1821A EMH2801 P-Channel Power MOSFET –20V, –3A, 85mΩ, Single EMH8 with Schottky Diode http://onsemi.com Features • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting • [MOSFET] • Low ON-resistance • 1.8V drive • [SBD] • Small switching noise • Low forward voltage (IF=2.0A, VF max=0.46V) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.
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