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FAD8253MX-1 - Half-Bridge Gate Driver

General Description

The FAD8253 is a monolithic half

for driving high voltage, high speed and high power IGBTs up to +1200 V.

voltage process and common mode noise canceling technique to provide stable operation of high side dr

Key Features

  • Floating Channel for Bootstrap Operation to +1200 V.
  • Peak Output Current Capability of 2.5 A Source/3.4 A Sink.
  • Allowable Negative VS Transient Swing of up to.
  • 15 V at VBS = 15 V.
  • Built.
  • in Common Mode dv/dt Noise Canceling Circuit.
  • Separate Power and Signal Ground for Enhanced dl/dt Immunity.
  • Matched Propagation Delay < 50 ns.
  • 3.3 V and 5 V Input Logic Compatible.
  • Built in Shoot.
  • through Prevention Lo.

📥 Download Datasheet

Datasheet Details

Part number FAD8253MX-1
Manufacturer onsemi
File Size 278.83 KB
Description Half-Bridge Gate Driver
Datasheet download datasheet FAD8253MX-1 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink FAD8253MX-1 Description The FAD8253 is a monolithic half−bridge gate driver IC designed for driving high voltage, high speed and high power IGBTs up to +1200 V. The FAD8253 employs ON’s high−voltage process and common−mode noise canceling technique to provide stable operation of high−side driver under high dv/dt noise circumstances. The gate driver includes UVLO circuits tailored to IGBT threshold for both high side and low side outputs to prevent malfunction when VDD and VBS are lower than the specified threshold voltage. The FAD8253 offers a built−in low−side current detection circuitry with an additional provision for soft shutdown (for low side) during overcurrent or short−circuit conditions.