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FCH165N60E - N-Channel MOSFET

Datasheet Summary

Description

SUPERFET II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • Typ. RDS(on) = 132 mW.
  • 650 V @ TJ = 150°C.
  • Ultra Low Gate Charge (Typ. Qg = 57 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 204 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – FCH165N60E

Datasheet Details

Part number FCH165N60E
Manufacturer ON Semiconductor
File Size 438.24 KB
Description N-Channel MOSFET
Datasheet download datasheet FCH165N60E Datasheet
Additional preview pages of the FCH165N60E datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, SUPERFET) II, Easy-Drive 600 V, 23 A, 165 mW FCH165N60E Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET easy−drive series offers slightly slower rise and fall times compared to the SUPERFET II MOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier design implementation.
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