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FCH165N60E - N-Channel MOSFET

General Description

SUPERFET II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Key Features

  • Typ. RDS(on) = 132 mW.
  • 650 V @ TJ = 150°C.
  • Ultra Low Gate Charge (Typ. Qg = 57 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 204 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription for FCH165N60E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FCH165N60E. For precise diagrams, and layout, please refer to the original PDF.

MOSFET – N-Channel, SUPERFET) II, Easy-Drive 600 V, 23 A, 165 mW FCH165N60E Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ...

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MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET easy−drive series offers slightly slower rise and fall times compared to the SUPERFET II MOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier design implementation.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FCH165N60E N-Channel SuperFET II Easy-Drive MOSFET Fairchild Semiconductor

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