FCH165N60E
Description
SUPERFET II MOSFET is ON Semiconductor’s brand- new high voltage super- junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on- resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET easy- drive series offers slightly slower rise and fall times pared to the SUPERFET II MOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SUPERFET II MOSFET series.
Features
- Typ. RDS(on) = 132 m W
- 650 V @ TJ = 150°C
- Ultra Low Gate Charge (Typ. Qg = 57 n C)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 204 p F)
- 100% Avalanche Tested
- These Devices are Pb- Free and are Ro HS pliant
Applications
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