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FCP165N65S3 - N-Channel MOSFET

General Description

SUPERFET III MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Key Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 140 mW.
  • Ultra Low Gate Charge (Typ. Qg = 39 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 341 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FCP165N65S3 MOSFET – Power, N-Channel, SUPERFET III, Easy-Drive 650 V, 19 A, 165 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy−drive series helps manage EMI issues and allows for easier design implementation. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 140 mW • Ultra Low Gate Charge (Typ. Qg = 39 nC) • Low Effective Output Capacitance (Typ. Coss(eff.