Description
N-Channel SuperFET® II MOSFET
600 V, 20.2 A, 199 mΩ
Features
- 650 V @TJ = 150°C.
- Max. RDS(on) = 199 mΩ.
- Ultra low gate charge (typ. Qg = 57 nC).
- Low effective output capacitance (typ. Coss. eff = 160 pF).
- 100% avalanche tested
SuperFET®II MOSFET is ON Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resis-tance and lower gate charge performance. This advanced tech-nology is tailored to minimize conduction loss,.
FCPF190N60-F152 Datasheet
