FCPF190N60-F152
Overview
N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ Features 650 V @TJ = 150°C Max. RDS(on) = 199 mΩ Ultra low gate charge (typ.
- 650 V @TJ = 150°C
- Max. RDS(on) = 199 mΩ
- Ultra low gate charge (typ. Qg = 57 nC)
- Low effective output capacitance (typ. = 160 pF)
- 100% avalanche tested SuperFET®II MOSFET is ON Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resis-tance and lower gate charge performance. This advanced tech-nology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET®II MOSFET is suitable for various AC/DC power conversion for system minia-turization and higher efficiency. Aplications
- LCD / LED / PDP TV Lighting
- Solar Inverter
- AC-DC Power Supply
- GD S TO-220F
