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FCPF190N60E-F154 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – N-Channel, SUPERFET) II 600 V, 20.6 A, 190 mW FCPF190N60E-F154.

General Description

SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance.

This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SUPERFET II MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

Key Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 160 mW.
  • Ultra Low Gate Charge (Typ. Qg = 63 nC).
  • Low Effective Output Capacitance (Typ. Coss. eff = 178 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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