FDA24N50F - 500V 24A N-Channel MOSFET

onsemi

General Description

on planar stripe and DMOS technology.

state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

RDS(on) = 166 mW (Typ. ) @ VGS = 10 V, ID = 12 A.
Low Gate Charge (Typ. 65 nC).
Low Crss (Typ. 32 pF).
100% Avalanche Tested.
Improved dv/dt Capability.
RoHS Compliant.

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FDA24N50F 500v 24a n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDA24N50F
Manufacturer	onsemi
File Size	287.27 KB
Description	500V 24A N-Channel MOSFET
Datasheet	FDA24N50F Datasheet

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Full PDF Text Transcription (Reference)

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MOSFET – N-Channel, UniFETt, FRFET) 500 V, 24 A, 200 mW FDA24N50F Description UniFET MOSFET is onsemi’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET MOSFET has been enhanced by lifetime control. Its trr is less than 100 ns and the reverse dv/dt immunity is 15 V/ns while normal planar MOSFETs have over 200 ns and 4.5 V/ns respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant.