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FDB3632 - 100V 80A N-Channel MOSFET

Features

  • RDS(ON) = 7.5 mW (Typ. ), VGS = 10 V, ID = 80 A.
  • Qg (tot) = 84 nC (Typ. ), VGS = 10 V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – FDB3632

Datasheet Details

Part number FDB3632
Manufacturer ON Semiconductor
File Size 882.42 KB
Description 100V 80A N-Channel MOSFET
Datasheet download datasheet FDB3632 Datasheet
Additional preview pages of the FDB3632 datasheet.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com MOSFET – Power, N-Channel, POWERTRENCH) VDSS 100 V RDS(ON) MAX 9 mW ID MAX 80 A 100 V, 80 A, 9 mW D FDH3632, FDP3632, FDB3632 Features • RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A • Qg (tot) = 84 nC (Typ.
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