FDB3632 Description
FDB3632 / FDP3632 / FDI3632 April 2003 FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ.
FDB3632 Key Features
- r DS(ON) = 7.5mΩ (Typ.), V GS = 10V, ID = 80A
- Qg(tot) = 84nC (Typ.), VGS = 10V
- Low Miller Charge
- Low QRR Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- Qualified to AEC Q101