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FDB3632-F085 - N-Channel MOSFET

Key Features

  • rDS(ON) = 7.5mΩ (Typ. ), VGS = 10V, ID = 80A.
  • Qg(tot) = 84nC (Typ. ), VGS = 10V.
  • Low Miller Charge.
  • Low QRR Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Qualified to AEC Q101.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB3632-F085 FDB3632-F085 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.