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FDB3652 - 100V 61A N-Channel MOSFET

Features

  • RDS(on) = 14 mW (Typ. ) @ VGS = 10 V, ID = 61 A.
  • Qg(tot) = 41 nC (Typ. ) @ VGS = 10 V.
  • Low Miller Charge.
  • Low QRR Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • These Devices are Pb.
  • Free and Halide Free.

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Datasheet preview – FDB3652

Datasheet Details

Part number FDB3652
Manufacturer ON Semiconductor
File Size 460.32 KB
Description 100V 61A N-Channel MOSFET
Datasheet download datasheet FDB3652 Datasheet
Additional preview pages of the FDB3652 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, POWERTRENCH) 100 V, 61 A, 16 mW FDP3652, FDB3652 Features • RDS(on) = 14 mW (Typ.) @ VGS = 10 V, ID = 61 A • Qg(tot) = 41 nC (Typ.
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