Kexin Electronics FDB3652
N-Channel MOSFET
| Part No. | FDB3652 |
|---|---|
| Datasheet | FDB3652 Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0.1 +0.22.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 SourceABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current-Continuous TC=25 TA=25 Power dissipation Derate above 25 Thermal Resistance Junction to Ambient Thermal Resistance, Junction-to-Case Channel temperature Storage temperature Symbol VDSS VGSS ID PD RèJA RèJC Tch Tstg Rating 100 20 61 9 150 1.0 43 1.0 175 -55 to +175 Unit V V A A W W/ /W /W 1 SMD Type KDB3652 (FDB3652)ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Drain to source breakdown voltage Symbol VDSS Drain cut-off current IDSS Gate leakage current Gate threshold voltage IGSS VGS(th) Drain to...