Fairchild Semiconductor FDB3652
N-Channel MOSFET
| Part No. | FDB3652 |
|---|---|
| Datasheet | FDB3652 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
APPLICATIONS
● rDS(on) = 14 mΩ ( Typ.), VGS = 10 V, ID = 61 A● Qg(tot) = 41 nC ( Typ.), VGS = 10 V
● Low Miller Charge
● Synchronous Rectification for ATX / Server / Telecom PSU
● Battery Protection Circuit
● Motor drives and Uninterruptible Power Supplies
● Low QRR Body Diode
● Micro Solar Inverter
● UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82769 GDS TO-220 G S D D2-PAK D G S MOSFET
MAXIMUM RATINGS
TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V) with RθJA = 43oC/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-220, D2-PAK Thermal Resistance Junction to Ambient TO-220, D2-PAK (Note 2) Thermal Resistance Junction to Ambient D2-PAK, 1in2 copper pad area FDP3652 / FDB3652 Unit 100 V ±20 V 61 43 9 Figure 4 182 150 1.0 -55 to 175 A A A A mJ W W/oC oC 1.
