onsemi FDB3652
100V 61A N-Channel MOSFET
| Part No. | FDB3652 |
|---|---|
| Datasheet | FDB3652 Download |
| Manufacturer |  onsemi |
| Description | 100V 61A N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● RDS(on) = 14 mW (Typ.) @ VGS = 10 V, ID = 61 A● Qg(tot) = 41 nC (Typ.) @ VGS = 10 V
● Low Miller Charge
● Low QRR Body Diode
● UIS Capability (Single Pulse and Repetitive Pulse)
● These Devices are Pb−Free and Halide Free
APPLICATIONS
● Synchronous Rectification for ATX / Server / Telecom PSU● Battery Protection Circuit
● Motor Drives and Uninterruptible Power Supplies
● Micro Solar Inverter MOSFET
MAXIMUM RATINGS
(TC = 25°C, unless otherwise noted) Symbol Parameter FDP3652 / FDB3652 Unit VDSS Drain to Source Voltage 100 V VGS Gate to Source Voltage +20 V ID Drain Current A Continuous (TC = 25°C, VGS = 10 V) 61 Continuous (TC = 100°C, VGS = 10 V) 43 Continuous (Tamb = 25°C, VGS = 10 V), 9 with RqJA = 43°C/W) Pulsed Figure 4 EAS Single Pulse Avalanche Energy (Note 1) PD Power Dissipation Derate above 25°C 182 mJ 150 W 1.0 W/°C TJ, TSTG Operating and Storage Temperature −55 to 175 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
