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FDB3682 - 100V 32A N-Channel MOSFET

Features

  • RDS(on) = 32 mW (Typ. ) @ VGS = 10 V, ID = 32 A.
  • QG(tot) = 18.5 nC (Typ. ) @ VGS = 10 V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – FDB3682

Datasheet Details

Part number FDB3682
Manufacturer ON Semiconductor
File Size 494.62 KB
Description 100V 32A N-Channel MOSFET
Datasheet download datasheet FDB3682 Datasheet
Additional preview pages of the FDB3682 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, POWERTRENCH) 100 V, 32 A, 36 mW FDB3682, FDP3682 Features • RDS(on) = 32 mW (Typ.) @ VGS = 10 V, ID = 32 A • QG(tot) = 18.5 nC (Typ.
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