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FDB3682 - 100V 32A N-Channel MOSFET

Key Features

  • RDS(on) = 32 mW (Typ. ) @ VGS = 10 V, ID = 32 A.
  • QG(tot) = 18.5 nC (Typ. ) @ VGS = 10 V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number FDB3682
Manufacturer onsemi
File Size 494.62 KB
Description 100V 32A N-Channel MOSFET
Datasheet download datasheet FDB3682 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 100 V, 32 A, 36 mW FDB3682, FDP3682 Features • RDS(on) = 32 mW (Typ.) @ VGS = 10 V, ID = 32 A • QG(tot) = 18.5 nC (Typ.