Datasheet4U Logo Datasheet4U.com

FDB9503L-F085 - P-Channel Power MOSFET

Features

  • Typical RDS(on) = 2.0 mΩ at VGS = - 10V, ID = - 80 A.
  • Typical Qg(tot) = 196 nC at VGS = - 10V, ID = - 80 A.
  • UIS Capability.
  • RoHS Compliant.
  • Qualified to AEC Q101 GS TO-263AB FDB SERIES.

📥 Download Datasheet

Datasheet preview – FDB9503L-F085

Datasheet Details

Part number FDB9503L-F085
Manufacturer onsemi
File Size 440.95 KB
Description P-Channel Power MOSFET
Datasheet download datasheet FDB9503L-F085 Datasheet
Additional preview pages of the FDB9503L-F085 datasheet.

📁 Similar Datasheet

  • FDB9403_F085 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDB9406_F085 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDB0165N807L - 80V 310A N-Channel MOSFET (Fairchild Semiconductor)
  • FDB016N04AL7 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDB0170N607L - 60V 300A N-Channel MOSFET (Fairchild Semiconductor)
  • FDB0190N807L - 80V 270A N-Channel MOSFET (Fairchild Semiconductor)
  • FDB024N04AL7 - MOSFET (Fairchild Semiconductor)
  • FDB024N06 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDB024N08BL7 - MOSFET (Fairchild Semiconductor)
  • FDB0250N807L - 80V 240A N-Channel MOSFET (Fairchild Semiconductor)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
FDB9503L-F085 P-Channel PowerTrench® MOSFET FDB9503L-F085 P-Channel PowerTrench® MOSFET - 40 V, - 110 A, 2.6 mΩ S D Features „ Typical RDS(on) = 2.0 mΩ at VGS = - 10V, ID = - 80 A „ Typical Qg(tot) = 196 nC at VGS = - 10V, ID = - 80 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 GS TO-263AB FDB SERIES Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Electrical Power Steering „ Integrated Starter/Alternator „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Published: |