FDB9503L-F085 Datasheet | onsemi

FDB9503L-F085 P-Channel Power Trench® MOSFET P-Channel Power Trench® MOSFET - 40 V, - 110 A, 2.6 mΩ Features - Typical RDS(on) = 2.0 mΩ at VGS = - 10V, ID = - 80 A - Typical Qg(tot) = 196 n C at VGS = - 10V, ID = - 80 A - UIS Capability - Ro HS pliant - Qualified to AEC Q101 TO-263AB FDB SERIES Applications - Automotive Engine Control - Power Train Management - Solenoid and Motor Drivers - Electrical Power Steering - Integrated Starter/Alternator - Distributed Power Architectures and VRM - Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (VGS= -10) (Note 1) Pulsed Drain Current Single Pulse Avalanche...