FDC2512
FDC2512 is N-Channel MOSFET manufactured by onsemi.
Description
This N- Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
- 1.4 A, 150 V. RDS(ON) = 425 m W @ VGS = 10 V
RDS(ON) = 475 m W @ VGS = 6 V
- High Performance Trench Technology for Extremely Low RDS(ON)
- Low Gate Charge (8 n C Typ)
- High Power and Current Handling Capability
- Fast Switching Speed
- This is a Pb- Free and Halide Free Device
Applications
- DC/DC Converter
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Unit
VDSS VGSS
Drain- Source Voltage
Gate- Source Voltage
Drain Current
- Continuous (Note 1a.)
- Pulsed
±20
A 1.4
Single Pulse Avalanche Energy
(Note 3)
13.5 m J
PD TJ, TSTG
Maximum Power Dissipation (Note 1a.) (Note 1b.)
Operating and Storage Junction Temperature Range
W 1.6 0.8
- 55 to
°C
+150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be...
