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FDC2512 - N-Channel MOSFET

General Description

This N

improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Key Features

  • 1.4 A, 150 V. RDS(ON) = 425 mW @ VGS = 10 V RDS(ON) = 475 mW @ VGS = 6 V.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • Low Gate Charge (8 nC Typ).
  • High Power and Current Handling Capability.
  • Fast Switching Speed.
  • This is a Pb.
  • Free and Halide Free Device.

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Datasheet Details

Part number FDC2512
Manufacturer onsemi
File Size 351.01 KB
Description N-Channel MOSFET
Datasheet download datasheet FDC2512 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 150 V FDC2512 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 1.4 A, 150 V.