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FDC6401N - Dual N-Channel MOSFET

Datasheet Summary

Description

This Dual N

to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features

  • 3.0 A, 20 V. RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 95 mW @ VGS = 2.5 V.
  • Low Gate Charge (3.3 nC).
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • High Power and Current Handling Capability.
  • This is a Pb.
  • Free and Halide Free Device.

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Datasheet preview – FDC6401N

Datasheet Details

Part number FDC6401N
Manufacturer ON Semiconductor
File Size 327.88 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDC6401N Datasheet
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Full PDF Text Transcription

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MOSFET – Dual, N-Channel, POWERTRENCH), Specified 2.5 V FDC6401N General Description This Dual N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 3.0 A, 20 V. RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 95 mW @ VGS = 2.5 V • Low Gate Charge (3.
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