Datasheet Details
| Part number | FDC6401N |
|---|---|
| Manufacturer | onsemi |
| File Size | 327.88 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet |
 FDC6401N Datasheet
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General Description
This Dual N
to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Key Features
- 3.0 A, 20 V. RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 95 mW @ VGS = 2.5 V.
- Low Gate Charge (3.3 nC).
- High Performance Trench Technology for Extremely Low RDS(ON).
- High Power and Current Handling Capability.
- This is a Pb.
- Free and Halide Free Device.