Datasheet Summary
MOSFET
- P-Channel, POWERTRENCH), Specified
2.5 V
General Description This P- Channel 2.5 V specified MOSFET uses a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V
- 12 V).
Features
- - 4.5 V,
- 20 V. RDS(ON) = 0.053 W @ VGS =
- 4.5 V
RDS(ON) = 0.080 W @ VGS =
- 2.5 V
- Rugged Gate Rating (±12 V)
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- This is a Pb- Free and Halide Free Device
Applications
- Battery Management
- Load Switch
- Battery...
