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FDC642P - P-Channel MOSFET

Datasheet Summary

Description

Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A Fast switching speed Low gate charge (11nC typical) High performance trench technology for extremely low rDS(on) SuperSOTTM-6 package: small

Features

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Datasheet Details

Part number FDC642P
Manufacturer ON Semiconductor
File Size 291.04 KB
Description P-Channel MOSFET
Datasheet download datasheet FDC642P Datasheet
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Full PDF Text Transcription

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FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET -20 V, -4.0 A, 65 mΩ Features General Description „ Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A „ Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A „ Fast switching speed „ Low gate charge (11nC typical) „ High performance trench technology for extremely low rDS(on) „ SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1 mm thick) „ Termination is Lead-free and RoHS Compliant This P-Channel 2.5V specified MOSFET is produced using ON Semicondcutor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
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