Datasheet Details
| Part number | FDC642P |
|---|---|
| Manufacturer | onsemi |
| File Size | 291.04 KB |
| Description | P-Channel MOSFET |
| Datasheet | FDC642P-ONSemiconductor.pdf |
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Overview: FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET -20 V, -4.
| Part number | FDC642P |
|---|---|
| Manufacturer | onsemi |
| File Size | 291.04 KB |
| Description | P-Channel MOSFET |
| Datasheet | FDC642P-ONSemiconductor.pdf |
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Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A Fast switching speed Low gate charge (11nC typical) High performance trench technology for extremely low rDS(on) SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8);
low profile (1 mm thick) Termination is Lead-free and RoHS pliant This P-Channel 2.5V specified MOSFET is produced using ON Semicondcutor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| FDC642P | P-Channel MOSFET | Fairchild Semiconductor | |
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