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FDC642P Datasheet P-channel MOSFET

Manufacturer: onsemi

Overview: FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET -20 V, -4.

General Description

„ Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A „ Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A „ Fast switching speed „ Low gate charge (11nC typical) „ High performance trench technology for extremely low rDS(on) „ SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8);

low profile (1 mm thick) „ Termination is Lead-free and RoHS pliant This P-Channel 2.5V specified MOSFET is produced using ON Semicondcutor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.

Key Features

  • General.

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