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FDC642P - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-20V.
  • ID =-4 A.
  • RDS(ON) ＜ 65mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 100mΩ (VGS =-2.5V) 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 0.4 MOSFET Unit:mm 0.15 +0.02 -0.02 +0.1 1.1 -0.1 0-0.1 +0.1 0.68 -0.1 1D 2D 3G D6 D5 S4.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation (Note.1) (Note.2) Thermal Resistance. Junction- to-Ambient.

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SMD Type P-Channel MOSFET FDC642P (KDC642P) ( SOT-23-6 ) 0.4+0.1 -0.1 ■ Features ● VDS (V) =-20V ● ID =-4 A ● RDS(ON) ＜ 65mΩ (VGS =-4.5V) ● RDS(ON) ＜ 100mΩ (VGS =-2.5V) 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 0.4 MOSFET Unit:mm 0.15 +0.02 -0.02 +0.1 1.1 -0.1 0-0.1 +0.1 0.68 -0.1 1D 2D 3G D6 D5 S4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation (Note.1) (Note.2) Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Junction Storage Temperature Range Note.1. Note.2. Symbol VDS VGS ID IDM PD RθJA RθJC TJ Tstg Rating -20 ±8 -4 -20 1.6 0.8 78 30 150 -55 to 150 Unit V A W ℃/W ℃ www.kexin.